WebSep 1, 1999 · This paper describes a new way to suppress the floating body effect (FBE) in SOI MOSFETs, which is applicable to the CMOS structure. The FBE can be suppressed by controlling the potential profile in the lower body region of SOI MOSFETs. The threshold voltage (VT) of SOI NMOSFETs little depends on drain voltage … Web2.3 SOI Defects and Issues 8 2.4 SOI MOSFET Transistors 9 3.0 SOI Reliability Issues 11 3.1 Self-Heating Effects 12 3.2 Hot Electron Effects 14 3.3 Radiation Effects 14 ... consideration the floating body effects, and at the same time take full advantage of the packing density and electrical characteristics are still under development. Also ...
A novel double-gate SOI MOSFET to improve the floating body effect …
WebSep 1, 2012 · Silicon-on-insulator (SOI) devices have an inherent floating body effect which may cause substantial influences in the performance of SOI devices and circuits. In this paper we propose a novel device structure to suppress the floating body effect by using an embedded junction field effect transistor (JFET). The key idea in this work is to … WebJan 1, 2013 · SOI MOS transistors suffer from floating body effect because of built up charges in silicon film (body) leads to kink effect, bipolar transistor action, premature breakdown and... some way off 意味
Effect of floating-body charge on SOI MOSFET design
WebSep 1, 2012 · The effects of the proposed structure on the floating body effect in a PD SOI MOSFET are numerically investigated using ATLAS, and the results are compared to those obtained in a conventional SOI device. Our results indicate that the proposed structure suppresses the floating body effects such as the kink effect, lowering of the drain … WebAnalysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's Abstract: Floating-body effects triggered by impact ionization in fully depleted submicrometer silicon-on-insulator (SOI) MOSFETs are analyzed based on two-dimensional device simulations. WebJul 1, 2001 · Abstract. Suppression of the floating body effects in partially depleted SOI–MOSFETs (silicon-on-insulator metal oxide semiconductor field effect transistors) with and without body contact electrodes has been investigated using nuclear microprobes with currents of 5–250 pA. Transient SOI–MOSFET behavior with and without body contact ... small containers for lotion samples